Silicon particle detectors in the next generation of experiments at the CERN Large Hadron Collider will be exposed to a very challenging radiation environment. The principal obstacle to long-term operation arises from changes in detector doping concentration (Neff), which lead to an increase in required operating voltage. We have previously presented a model of inter-defect charge exchange between closely-spaced centres in the dense terminal clusters formed by hadron irradiation. This manifestly non-Shockley-Read-Hall mechanism leads to a marked increase in carrier generation rate and negative space charge over the SRH prediction. We present here measurements of spectra from 241Am alpha particles and 1064 nm laser pulses as a function of bias over a range of temperatures. Values of Neff and substrate type are extracted from the spectra and compared with the model. The model is implemented in both a commercial finite-element device simulator (ISE-TCAD) and a purpose-built simulation of inter-defect charge exchange. Deviations from the model are explored, and conclusions drawn as to the feasibility of operating silicon particle detectors at cryogenic temperatures.

Inter-defect charge exchange in silicon particle detectors at cryogenic temperatures

SANTOCCHIA, Attilio;PASSERI, Daniele;
2001

Abstract

Silicon particle detectors in the next generation of experiments at the CERN Large Hadron Collider will be exposed to a very challenging radiation environment. The principal obstacle to long-term operation arises from changes in detector doping concentration (Neff), which lead to an increase in required operating voltage. We have previously presented a model of inter-defect charge exchange between closely-spaced centres in the dense terminal clusters formed by hadron irradiation. This manifestly non-Shockley-Read-Hall mechanism leads to a marked increase in carrier generation rate and negative space charge over the SRH prediction. We present here measurements of spectra from 241Am alpha particles and 1064 nm laser pulses as a function of bias over a range of temperatures. Values of Neff and substrate type are extracted from the spectra and compared with the model. The model is implemented in both a commercial finite-element device simulator (ISE-TCAD) and a purpose-built simulation of inter-defect charge exchange. Deviations from the model are explored, and conclusions drawn as to the feasibility of operating silicon particle detectors at cryogenic temperatures.
2001
0780373243
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11391/1002470
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 0
  • ???jsp.display-item.citation.isi??? 0
social impact