Lateral current crowding effects on contact resistance measurements in four terminal resistor patterns are discussed by using a computer model based on a three-dimensional resistor network. The model is then applied to extrapolate the contact resistivity in n +, p + silicon/titanium silicide interfaces. Values in agreement with the ones predicted by the field and thermionic field emission theory are obtained.
Lateral Current Crowding Effects on Contact Resistance Measurements in Four Terminal Resistor Test Patterns
SCORZONI, Andrea;
1984
Abstract
Lateral current crowding effects on contact resistance measurements in four terminal resistor patterns are discussed by using a computer model based on a three-dimensional resistor network. The model is then applied to extrapolate the contact resistivity in n +, p + silicon/titanium silicide interfaces. Values in agreement with the ones predicted by the field and thermionic field emission theory are obtained.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
