High gate-current density, which can arise due to RF overdrive, induces two degradation mechanisms in Al-gate power GaAs MESFET’s: 1) high current density through the Al-gate finger section causes gate interruption at the beginning of the metal stripe due to electromigration and makes it impossible to reach the pinchoff condition; 2) high current density through the Schottky junction promotes a fast AllGaAs interaction, causing an increase in the Schottky-barrier height from 0.80 to 0.96 eV owing to the formation of an AIxGa(1-x)As interfacial layer. AI/GaAs interaction appears to be enhanced by the electron current at a given temperature.
Degradation Mechanisms Induced by High Current Density in Al-gate GaAs MESFETs
SCORZONI, Andrea;
1987
Abstract
High gate-current density, which can arise due to RF overdrive, induces two degradation mechanisms in Al-gate power GaAs MESFET’s: 1) high current density through the Al-gate finger section causes gate interruption at the beginning of the metal stripe due to electromigration and makes it impossible to reach the pinchoff condition; 2) high current density through the Schottky junction promotes a fast AllGaAs interaction, causing an increase in the Schottky-barrier height from 0.80 to 0.96 eV owing to the formation of an AIxGa(1-x)As interfacial layer. AI/GaAs interaction appears to be enhanced by the electron current at a given temperature.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
