Two modules of the L3 Silicon Microvertex Detector (SMD) have been tested on beam. The active area of the modules consists of double sided silicon microstrip detectors; the implantation pitch is 25 mum and 50 mum in the junction and ohmic side, respectively. The detectors are read out by a VLSI radiation hard amplifier (SVX-H). The position resolution, with a readout pitch of 50 mum and 200 mum for the two sides, is determined to be 7.0 mum and 14.3 mum. A signal to noise ratio greater-than-or-equal-to 16 and a detection efficiency greater-than-or-equal-to 99% are measured for both sides.

Performance On Test Beam of the L3 Double-sided Silicon Microstrip Detector

SANTOCCHIA, Attilio;FIANDRINI, Emanuele;PAULUZZI, Michele
1994

Abstract

Two modules of the L3 Silicon Microvertex Detector (SMD) have been tested on beam. The active area of the modules consists of double sided silicon microstrip detectors; the implantation pitch is 25 mum and 50 mum in the junction and ohmic side, respectively. The detectors are read out by a VLSI radiation hard amplifier (SVX-H). The position resolution, with a readout pitch of 50 mum and 200 mum for the two sides, is determined to be 7.0 mum and 14.3 mum. A signal to noise ratio greater-than-or-equal-to 16 and a detection efficiency greater-than-or-equal-to 99% are measured for both sides.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11391/1026277
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