Vertically-integrated metal-insulator-metal (MIM) capacitors on silicon are demonstrated for the first time utilizing an entirely additive RF-specific inkjet-printing process. The inkjet-printed MIM capacitors demonstrate a high capacitance per unit area of up to 33 pF/mm2 by utilizing novel dielectric inks, while achieving quality factors (Q) up to 25 and self-resonant frequencies (SRFs) above 1 GHz. Measurements of dielectric permittivity, leakage current, voltage breakdown, and fabrication repeatability are presented confirming the high-performance operation of the printed MIM capacitors.

State-of-the-Art Inkjet-Printed Metal-Insulator-Metal (MIM) Capacitors on Silicon Substrate

MARIOTTI, CHIARA;ROSELLI, Luca;
2015

Abstract

Vertically-integrated metal-insulator-metal (MIM) capacitors on silicon are demonstrated for the first time utilizing an entirely additive RF-specific inkjet-printing process. The inkjet-printed MIM capacitors demonstrate a high capacitance per unit area of up to 33 pF/mm2 by utilizing novel dielectric inks, while achieving quality factors (Q) up to 25 and self-resonant frequencies (SRFs) above 1 GHz. Measurements of dielectric permittivity, leakage current, voltage breakdown, and fabrication repeatability are presented confirming the high-performance operation of the printed MIM capacitors.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11391/1354613
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