An experimental study via X-ray photoelectron spectroscopy at different takeoff angles of the derivatization of atomically flat, hydrogen terminated, 1×1 (1-0-0) Si surfaces with 1-octyne is reported. The major conclusion of the experimental analysis (that a large fraction of the grafted moieties contain unreacted π bonds) is then compared with the results of high-level ab initio modelling with model molecules of the derivatization act. © 2004 Elsevier B.V. All rights reserved.

Functionalization of atomically flat, dihydrogen terminated, 1 × 1 (1-0-0) silicon via reaction with 1-alkyne

Giorgi G.;Sgamellotti A.;
2005

Abstract

An experimental study via X-ray photoelectron spectroscopy at different takeoff angles of the derivatization of atomically flat, hydrogen terminated, 1×1 (1-0-0) Si surfaces with 1-octyne is reported. The major conclusion of the experimental analysis (that a large fraction of the grafted moieties contain unreacted π bonds) is then compared with the results of high-level ab initio modelling with model molecules of the derivatization act. © 2004 Elsevier B.V. All rights reserved.
2005
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11391/1459409
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