A circular geometry based test structure for contact resistance measurements is introduced, together with a compact analytical model for contact resistivity extraction. The Circular Resistor (CR) structure is intended to be used for VLSI contacts that tend to a rounded shape due to lithographic effects.

Electrical characterization of the TiN/Ti/n+/Si (and p+/Si) interfaces by means of a circular resistor test structure

SCORZONI, Andrea;
1991

Abstract

A circular geometry based test structure for contact resistance measurements is introduced, together with a compact analytical model for contact resistivity extraction. The Circular Resistor (CR) structure is intended to be used for VLSI contacts that tend to a rounded shape due to lithographic effects.
1991
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11391/915979
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