A circular geometry based test structure for contact resistance measurements is introduced, together with a compact analytical model for contact resistivity extraction. The Circular Resistor (CR) structure is intended to be used for VLSI contacts that tend to a rounded shape due to lithographic effects.
Electrical characterization of the TiN/Ti/n+/Si (and p+/Si) interfaces by means of a circular resistor test structure
SCORZONI, Andrea;
1991
Abstract
A circular geometry based test structure for contact resistance measurements is introduced, together with a compact analytical model for contact resistivity extraction. The Circular Resistor (CR) structure is intended to be used for VLSI contacts that tend to a rounded shape due to lithographic effects.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.