Current crowding and misalignment effects as sources of error in contact resistivity measurements. Part II: Experimental results and computer simulation of self-aligned test structures

In this work we show that an accurate and straightforward extraction of the contact resistivity from contact resistance data can be achieved using properly designed self-aligned test patterns. In this way, the parasitic effects are minimized and the contact resistbrity can be derived using simple one-dimensional models as confirmed by our computer simulation. Experimental results obtained in self-aligned structures are presented for AI/CoSi,/n+Si and Al-Si/n+Si contacts.