In this paper, an accurate technique for the simulation of high-frequency electronic circuits is described. The circuit simulator is based on a three dimensional implementation of the Lumped Element FDTD (LE-FDTD). A fairly wide library of basic linear and non linear device models suitable for HF simulations has been arranged, which includes: linear resistors, inductors and capacitors, matched voltage generators, pn and Shottky diodes, bipolar transistors, and MeSFETs. Dynamic, as well as static device behavior is taken into account. Some simulation examples are given, and compared with alternative simulation techniques.

Numerical analysis of electronic circuits with FDTD-LE technique,

MEZZANOTTE, Paolo;ROSELLI, Luca;CIAMPOLINI, Paolo
1996

Abstract

In this paper, an accurate technique for the simulation of high-frequency electronic circuits is described. The circuit simulator is based on a three dimensional implementation of the Lumped Element FDTD (LE-FDTD). A fairly wide library of basic linear and non linear device models suitable for HF simulations has been arranged, which includes: linear resistors, inductors and capacitors, matched voltage generators, pn and Shottky diodes, bipolar transistors, and MeSFETs. Dynamic, as well as static device behavior is taken into account. Some simulation examples are given, and compared with alternative simulation techniques.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11391/1085069
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 2
  • ???jsp.display-item.citation.isi??? 0
social impact