In this paper, an accurate technique for the simulation of high-frequency electronic circuits is described. The circuit simulator is based on a three dimensional implementation of the Lumped Element FDTD (LE-FDTD). A fairly wide library of basic linear and non linear device models suitable for HF simulations has been arranged, which includes: linear resistors, inductors and capacitors, matched voltage generators, pn and Shottky diodes, bipolar transistors, and MeSFETs. Dynamic, as well as static device behavior is taken into account. Some simulation examples are given, and compared with alternative simulation techniques.
Numerical analysis of electronic circuits with FDTD-LE technique,
MEZZANOTTE, Paolo;ROSELLI, Luca;CIAMPOLINI, Paolo
1996
Abstract
In this paper, an accurate technique for the simulation of high-frequency electronic circuits is described. The circuit simulator is based on a three dimensional implementation of the Lumped Element FDTD (LE-FDTD). A fairly wide library of basic linear and non linear device models suitable for HF simulations has been arranged, which includes: linear resistors, inductors and capacitors, matched voltage generators, pn and Shottky diodes, bipolar transistors, and MeSFETs. Dynamic, as well as static device behavior is taken into account. Some simulation examples are given, and compared with alternative simulation techniques.File in questo prodotto:
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