RF-MEMS represent a feasible solution to obtain very low power dissipation and insertion loss, very high isolation and linearity switch respect to “solid state” technologies. In this paper we demonstrate the possibility to fully integrate the process fabrication of RF-MEMS switches in the GaN-HEMT manufacturing steps to develop a RF-MEMS/MMIC prototype. MEMS RF performance reveals an insertion loss and an isolation respectively better than 0.6 dB and 25dB in the frequency range 5–50 GHz. Moreover the coexisting HEMT devices show a fmax=40 GHz and 6.5 W/mm density power, demonstrating the integration achievability.

New fabrication process to manufacture RF-MEMS and HEMT on GaN/Si substrate

FARINELLI, PAOLA;
2009

Abstract

RF-MEMS represent a feasible solution to obtain very low power dissipation and insertion loss, very high isolation and linearity switch respect to “solid state” technologies. In this paper we demonstrate the possibility to fully integrate the process fabrication of RF-MEMS switches in the GaN-HEMT manufacturing steps to develop a RF-MEMS/MMIC prototype. MEMS RF performance reveals an insertion loss and an isolation respectively better than 0.6 dB and 25dB in the frequency range 5–50 GHz. Moreover the coexisting HEMT devices show a fmax=40 GHz and 6.5 W/mm density power, demonstrating the integration achievability.
2009
9781424447480
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11391/171289
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact