Novel MEMS switches with stepped pull-down voltage are introduced for applications in MEMS-tunable phase shifters. A dual band phase shifter has been designed employing four couples of those ohmic contact MEMS switches, each one designed to have a different pull-down voltage in the range of 12-60 Volts with an increasing step of about 15 Volts. A significant reduction of the biasing network complexity is achieved, allowing to reconfigure the phase shifter by using a single control signal. The electromechanical and electromagnetic design of the single switches as well as the complete device are presented in this paper. The devices are designed on a 525 µm high resistivity silicon substrate, employing the ITC-irst well-established eight-mask surface micro-machining process. The fabrication is presently in progress at Itc-irst laboratories in Trento, Italy.
MEMS Switches with Stepped Pull-Down Voltage for Tunable Phase Shifters
FARINELLI, PAOLA;OCERA, ALESSANDRO;SORRENTINO, Roberto
2008
Abstract
Novel MEMS switches with stepped pull-down voltage are introduced for applications in MEMS-tunable phase shifters. A dual band phase shifter has been designed employing four couples of those ohmic contact MEMS switches, each one designed to have a different pull-down voltage in the range of 12-60 Volts with an increasing step of about 15 Volts. A significant reduction of the biasing network complexity is achieved, allowing to reconfigure the phase shifter by using a single control signal. The electromechanical and electromagnetic design of the single switches as well as the complete device are presented in this paper. The devices are designed on a 525 µm high resistivity silicon substrate, employing the ITC-irst well-established eight-mask surface micro-machining process. The fabrication is presently in progress at Itc-irst laboratories in Trento, Italy.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
