RF-MEMS represent a feasible solution to obtain very low power dissipation and insertion loss, very high isolation and linearity switch in respect to “solid state” technologies. In this paper has been demonstrated the possibility to fully integrate the process fabrication of RF-MEMS switches in the GaN-HEMT manufacturing steps to develop a RF-MEMS/MMIC prototype. MEMS RF performance reveals an insertion loss and an isolation respectively better than 0.6 dB and 25dB in the frequency range 5–50 GHz. Moreover the coexisting HEMT devices show a fmax=40 GHz and 6.5 W/mm density power, demonstrating the integration achievability.
Manufacturing RF-MEMS and HEMT devices on GaN/Si Substrate
FARINELLI, PAOLA;
2010
Abstract
RF-MEMS represent a feasible solution to obtain very low power dissipation and insertion loss, very high isolation and linearity switch in respect to “solid state” technologies. In this paper has been demonstrated the possibility to fully integrate the process fabrication of RF-MEMS switches in the GaN-HEMT manufacturing steps to develop a RF-MEMS/MMIC prototype. MEMS RF performance reveals an insertion loss and an isolation respectively better than 0.6 dB and 25dB in the frequency range 5–50 GHz. Moreover the coexisting HEMT devices show a fmax=40 GHz and 6.5 W/mm density power, demonstrating the integration achievability.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
