PIGNATEL, Giorgio Umberto
 Distribuzione geografica
Continente #
NA - Nord America 406
EU - Europa 338
AS - Asia 123
Totale 867
Nazione #
US - Stati Uniti d'America 406
UA - Ucraina 99
IE - Irlanda 89
SE - Svezia 58
SG - Singapore 46
HK - Hong Kong 42
VN - Vietnam 27
IT - Italia 23
FI - Finlandia 21
DE - Germania 14
RU - Federazione Russa 14
GB - Regno Unito 8
CN - Cina 5
NL - Olanda 3
CH - Svizzera 2
CZ - Repubblica Ceca 2
FR - Francia 2
BE - Belgio 1
IN - India 1
LB - Libano 1
PL - Polonia 1
SK - Slovacchia (Repubblica Slovacca) 1
TR - Turchia 1
Totale 867
Città #
Dublin 89
Chandler 65
San Mateo 53
Jacksonville 50
Hong Kong 41
Singapore 30
Dong Ket 27
Boardman 20
Medford 17
Princeton 17
Santa Clara 17
Ann Arbor 15
Altamura 12
Lawrence 10
Wilmington 9
Andover 7
Saint Petersburg 7
Des Moines 6
Norwalk 6
Auburn Hills 4
Helsinki 4
San Paolo di Civitate 4
Den Haag 3
San Diego 3
Woodbridge 3
Ashburn 2
Beijing 2
Moscow 2
New York 2
Shanghai 2
Bratislava 1
Brussels 1
Clearwater 1
Dallas 1
Geneva 1
Houston 1
Izmir 1
Kiev 1
Kraków 1
Lausanne 1
Olomouc 1
Philadelphia 1
Tappahannock 1
Totale 542
Nome #
Active pixel sensor architectures in standard CMOS technology for charge-particle detection 99
"Device simulation of irradiated silicon detectors at cryogenic temperatures" 92
A comprehensive analysis of irradiated silicon detectors at cryogenic temperatures 66
Active Pixel Sensors Detectors in CMOS Technology 63
Device simulation of irradiated silicon detectors at cryogenic temperatures. 56
Numerical analysis of thinned silicon detectors 56
Numerical simulation of radiation damage effects in p-type silicon detectors 50
Defects Modeling of Heavily Irradiated Silicon Detectors 48
Development of the first prototypes of Silicon PhotoMultiplier (SiPM) at ITC-irst 47
Thermal and Electrical Characterization of Silicon Photomultiplier 45
Thermal Characterization of a sensor microheater through an effective temperature coefficient of resistance 43
Comprehensive device simulation modeling of heavily irradiated silicon detectors at cryogenic temperatures 42
Time resolving characteristics of HPK and FBK silicon photomultipliers for TOF and PET applications 42
An Enhanced Device Simulation of Heavily Irradiated Silicon Detectors at Cryogenic Temperatures 40
A Comprehensive Numerical Simulation of Heavily Irradiated p-type and n-type Silicon Detectors 38
Recent progress of the RD50 Collaboration - Development of radiation tolerant tracking detectors 36
Progress on the development of a silicon–carbon nanotube photodetector 31
Totale 894
Categoria #
all - tutte 3.714
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 3.714


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202052 0 0 0 0 12 0 13 0 14 3 0 10
2020/2021193 1 14 8 15 46 12 14 0 22 10 16 35
2021/2022137 4 40 1 9 1 0 1 44 2 3 15 17
2022/2023267 17 46 1 16 14 22 0 15 121 0 10 5
2023/202497 12 8 10 1 0 0 18 2 20 0 19 7
2024/202568 0 20 0 20 28 0 0 0 0 0 0 0
Totale 894