statistiche ricercatore

Nazione	#
US - Stati Uniti d'America	567
SG - Singapore	182
HK - Hong Kong	122
UA - Ucraina	100
IE - Irlanda	90
SE - Svezia	58
CN - Cina	56
BR - Brasile	55
VN - Vietnam	51
RU - Federazione Russa	47
FR - Francia	29
FI - Finlandia	26
IT - Italia	26
DE - Germania	25
KR - Corea	20
GB - Regno Unito	13
CA - Canada	8
IN - India	8
BD - Bangladesh	7
PL - Polonia	6
TR - Turchia	6
ZA - Sudafrica	6
MX - Messico	5
AR - Argentina	4
CZ - Repubblica Ceca	4
IQ - Iraq	4
NL - Olanda	4
BE - Belgio	3
CO - Colombia	3
SA - Arabia Saudita	3
AE - Emirati Arabi Uniti	2
AZ - Azerbaigian	2
CH - Svizzera	2
ES - Italia	2
ID - Indonesia	2
LB - Libano	2
BG - Bulgaria	1
CI - Costa d'Avorio	1
CL - Cile	1
CR - Costa Rica	1
EG - Egitto	1
ET - Etiopia	1
GN - Guinea	1
HN - Honduras	1
IL - Israele	1
KH - Cambogia	1
LK - Sri Lanka	1
LT - Lituania	1
MA - Marocco	1
MY - Malesia	1
NG - Nigeria	1
NP - Nepal	1
PE - Perù	1
PH - Filippine	1
PK - Pakistan	1
RO - Romania	1
SK - Slovacchia (Repubblica Slovacca)	1
SY - Repubblica araba siriana	1
TN - Tunisia	1
VE - Venezuela	1
Totale	1.574

Nome	#
Active pixel sensor architectures in standard CMOS technology for charge-particle detection	204
"Device simulation of irradiated silicon detectors at cryogenic temperatures"	141
A comprehensive analysis of irradiated silicon detectors at cryogenic temperatures	108
Active Pixel Sensors Detectors in CMOS Technology	95
Numerical simulation of radiation damage effects in p-type silicon detectors	94
Thermal Characterization of a sensor microheater through an effective temperature coefficient of resistance	92
Development of the ﬁrst prototypes of Silicon PhotoMultiplier (SiPM) at ITC-irst	91
Device simulation of irradiated silicon detectors at cryogenic temperatures.	85
Numerical analysis of thinned silicon detectors	83
Thermal and Electrical Characterization of Silicon Photomultiplier	83
Defects Modeling of Heavily Irradiated Silicon Detectors	82
Time resolving characteristics of HPK and FBK silicon photomultipliers for TOF and PET applications	80
A Comprehensive Numerical Simulation of Heavily Irradiated p-type and n-type Silicon Detectors	80
Comprehensive device simulation modeling of heavily irradiated silicon detectors at cryogenic temperatures	76
Recent progress of the RD50 Collaboration - Development of radiation tolerant tracking detectors	74
An Enhanced Device Simulation of Heavily Irradiated Silicon Detectors at Cryogenic Temperatures	69
Progress on the development of a silicon–carbon nanotube photodetector	64
Totale	1.601

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2020/2021	61	0	0	0	0	0	0	0	0	0	10	16	35
2021/2022	137	4	40	1	9	1	0	1	44	2	3	15	17
2022/2023	267	17	46	1	16	14	22	0	15	121	0	10	5
2023/2024	97	12	8	10	1	0	0	18	2	20	0	19	7
2024/2025	232	0	20	0	20	28	26	7	22	34	14	48	13
2025/2026	543	37	53	22	53	75	32	119	51	77	24	0	0
Totale													1.601

IRIS - Res&Arch Institutional Research Information System - Research & Archive