statistiche ricercatore

Continente	#
NA - Nord America	689
AS - Asia	482
EU - Europa	442
SA - Sud America	68
Continente sconosciuto - Info sul continente non disponibili	27
AF - Africa	13
Totale	1.721

Nazione	#
US - Stati Uniti d'America	666
SG - Singapore	187
HK - Hong Kong	122
UA - Ucraina	100
IE - Irlanda	90
SE - Svezia	58
CN - Cina	57
BR - Brasile	56
VN - Vietnam	51
RU - Federazione Russa	47
FR - Francia	29
IT - Italia	27
FI - Finlandia	26
DE - Germania	25
KR - Corea	20
GB - Regno Unito	14
CA - Canada	13
IN - India	8
BD - Bangladesh	7
PL - Polonia	6
TR - Turchia	6
ZA - Sudafrica	6
CO - Colombia	5
MX - Messico	5
AR - Argentina	4
CZ - Repubblica Ceca	4
IQ - Iraq	4
NL - Olanda	4
BE - Belgio	3
SA - Arabia Saudita	3
AE - Emirati Arabi Uniti	2
AZ - Azerbaigian	2
CH - Svizzera	2
ES - Italia	2
HN - Honduras	2
ID - Indonesia	2
LB - Libano	2
BG - Bulgaria	1
CI - Costa d'Avorio	1
CL - Cile	1
CR - Costa Rica	1
EE - Estonia	1
EG - Egitto	1
ET - Etiopia	1
GN - Guinea	1
GT - Guatemala	1
IL - Israele	1
JP - Giappone	1
KH - Cambogia	1
LK - Sri Lanka	1
LT - Lituania	1
MA - Marocco	1
MY - Malesia	1
NG - Nigeria	1
NP - Nepal	1
PE - Perù	1
PH - Filippine	1
PK - Pakistan	1
PR - Porto Rico	1
RO - Romania	1
SK - Slovacchia (Repubblica Slovacca)	1
SY - Repubblica araba siriana	1
TN - Tunisia	1
VE - Venezuela	1
Totale	1.694

Nome	#
Active pixel sensor architectures in standard CMOS technology for charge-particle detection	209
"Device simulation of irradiated silicon detectors at cryogenic temperatures"	149
A comprehensive analysis of irradiated silicon detectors at cryogenic temperatures	115
Numerical simulation of radiation damage effects in p-type silicon detectors	102
Active Pixel Sensors Detectors in CMOS Technology	100
Development of the ﬁrst prototypes of Silicon PhotoMultiplier (SiPM) at ITC-irst	99
Thermal Characterization of a sensor microheater through an effective temperature coefficient of resistance	96
Device simulation of irradiated silicon detectors at cryogenic temperatures.	95
Thermal and Electrical Characterization of Silicon Photomultiplier	92
Numerical analysis of thinned silicon detectors	90
Defects Modeling of Heavily Irradiated Silicon Detectors	88
A Comprehensive Numerical Simulation of Heavily Irradiated p-type and n-type Silicon Detectors	87
Time resolving characteristics of HPK and FBK silicon photomultipliers for TOF and PET applications	86
Comprehensive device simulation modeling of heavily irradiated silicon detectors at cryogenic temperatures	83
Recent progress of the RD50 Collaboration - Development of radiation tolerant tracking detectors	81
An Enhanced Device Simulation of Heavily Irradiated Silicon Detectors at Cryogenic Temperatures	77
Progress on the development of a silicon–carbon nanotube photodetector	72
Totale	1.721

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2021/2022	92	0	0	0	9	1	0	1	44	2	3	15	17
2022/2023	267	17	46	1	16	14	22	0	15	121	0	10	5
2023/2024	97	12	8	10	1	0	0	18	2	20	0	19	7
2024/2025	232	0	20	0	20	28	26	7	22	34	14	48	13
2025/2026	557	37	53	22	53	75	32	119	51	77	26	7	5
2026/2027	106	6	13	13	74	0	0	0	0	0	0	0	0
Totale													1.721

IRIS - Res&Arch Institutional Research Information System - Research & Archive