statistiche ricercatore

Continente	#
NA - Nord America	608
AS - Asia	478
EU - Europa	440
SA - Sud America	68
Continente sconosciuto - Info sul continente non disponibili	27
AF - Africa	13
Totale	1.634

Nazione	#
US - Stati Uniti d'America	590
SG - Singapore	184
HK - Hong Kong	122
UA - Ucraina	100
IE - Irlanda	90
SE - Svezia	58
CN - Cina	57
BR - Brasile	56
VN - Vietnam	51
RU - Federazione Russa	47
FR - Francia	29
IT - Italia	27
FI - Finlandia	26
DE - Germania	25
KR - Corea	20
GB - Regno Unito	13
CA - Canada	11
IN - India	8
BD - Bangladesh	7
PL - Polonia	6
TR - Turchia	6
ZA - Sudafrica	6
CO - Colombia	5
MX - Messico	5
AR - Argentina	4
CZ - Repubblica Ceca	4
IQ - Iraq	4
NL - Olanda	4
BE - Belgio	3
SA - Arabia Saudita	3
AE - Emirati Arabi Uniti	2
AZ - Azerbaigian	2
CH - Svizzera	2
ES - Italia	2
ID - Indonesia	2
LB - Libano	2
BG - Bulgaria	1
CI - Costa d'Avorio	1
CL - Cile	1
CR - Costa Rica	1
EG - Egitto	1
ET - Etiopia	1
GN - Guinea	1
HN - Honduras	1
IL - Israele	1
KH - Cambogia	1
LK - Sri Lanka	1
LT - Lituania	1
MA - Marocco	1
MY - Malesia	1
NG - Nigeria	1
NP - Nepal	1
PE - Perù	1
PH - Filippine	1
PK - Pakistan	1
RO - Romania	1
SK - Slovacchia (Repubblica Slovacca)	1
SY - Repubblica araba siriana	1
TN - Tunisia	1
VE - Venezuela	1
Totale	1.607

Nome	#
Active pixel sensor architectures in standard CMOS technology for charge-particle detection	207
"Device simulation of irradiated silicon detectors at cryogenic temperatures"	145
A comprehensive analysis of irradiated silicon detectors at cryogenic temperatures	110
Active Pixel Sensors Detectors in CMOS Technology	97
Development of the ﬁrst prototypes of Silicon PhotoMultiplier (SiPM) at ITC-irst	95
Numerical simulation of radiation damage effects in p-type silicon detectors	94
Thermal Characterization of a sensor microheater through an effective temperature coefficient of resistance	94
Device simulation of irradiated silicon detectors at cryogenic temperatures.	87
Thermal and Electrical Characterization of Silicon Photomultiplier	85
Numerical analysis of thinned silicon detectors	84
Time resolving characteristics of HPK and FBK silicon photomultipliers for TOF and PET applications	84
Defects Modeling of Heavily Irradiated Silicon Detectors	82
A Comprehensive Numerical Simulation of Heavily Irradiated p-type and n-type Silicon Detectors	81
Comprehensive device simulation modeling of heavily irradiated silicon detectors at cryogenic temperatures	77
Recent progress of the RD50 Collaboration - Development of radiation tolerant tracking detectors	75
An Enhanced Device Simulation of Heavily Irradiated Silicon Detectors at Cryogenic Temperatures	71
Progress on the development of a silicon–carbon nanotube photodetector	66
Totale	1.634

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2021/2022	133	0	40	1	9	1	0	1	44	2	3	15	17
2022/2023	267	17	46	1	16	14	22	0	15	121	0	10	5
2023/2024	97	12	8	10	1	0	0	18	2	20	0	19	7
2024/2025	232	0	20	0	20	28	26	7	22	34	14	48	13
2025/2026	557	37	53	22	53	75	32	119	51	77	26	7	5
2026/2027	19	6	13	0	0	0	0	0	0	0	0	0	0
Totale													1.634

IRIS - Res&Arch Institutional Research Information System - Research & Archive