The silicon strip microvertex detector for the DELPHI experiment at LEP is presented. It consists of two cylindrical layers with a total of 165 888 strips. The design parameters of the final project are described. The microstrip counters have a pitch of 16.6 μm, and are read out every 50 μm using the capacitive charge division method. The electronics used is the Microplex chip, an NMOS integrated circuit, which provides 128 channels of low noise charge sensitive amplifiers with multiplexed analog output. Results of signal-to-noise ratio from beam tests on prototype detectors are given and discussed.

The DELPHI silicon strip microvertex detector

ANZIVINO, Giuseppina
1988

Abstract

The silicon strip microvertex detector for the DELPHI experiment at LEP is presented. It consists of two cylindrical layers with a total of 165 888 strips. The design parameters of the final project are described. The microstrip counters have a pitch of 16.6 μm, and are read out every 50 μm using the capacitive charge division method. The electronics used is the Microplex chip, an NMOS integrated circuit, which provides 128 channels of low noise charge sensitive amplifiers with multiplexed analog output. Results of signal-to-noise ratio from beam tests on prototype detectors are given and discussed.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11391/1004911
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