Resistance degradation of thin film conductors is studied within a stochastic approach based on a random resistor network. Both defect generation and recovery are considered and assumed to depend on the stressing current. The main features of available experiments are well reproduced thus providing a unified interpretation of degradation processes and failure in terms of physical parameters.
A Stochastic Approach to Failure Analysis in Electromigration Phenomena
SCORZONI, Andrea
1999
Abstract
Resistance degradation of thin film conductors is studied within a stochastic approach based on a random resistor network. Both defect generation and recovery are considered and assumed to depend on the stressing current. The main features of available experiments are well reproduced thus providing a unified interpretation of degradation processes and failure in terms of physical parameters.File in questo prodotto:
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