The magnetoresistive random access memory (MRAM) combines the virtues of magnetics (e.g. infinite cyclability, non volatility, scalability) and silicon-based memories [1]. Spin-transfer-driven magnetic switching may lead to reductions of the current densities required to induce switching or to increase the switching speed. Recently, materials with perpendicular anisotropy have been proposed to be used as memory cell, since they satisfied high thermal stability at room temperature and reduced critical current. This work proposes an innovative way to excite the magnetization that is able to trigger the reversal mechanism of the magnetization. The method consists to simultaneously use a dc spin-polarized current and a very small perpendicular microwave field phase modulated by two pseudo-orthogonal Maximum Length Sequences
Maximum Length Sequences for fast switching process in spin-valve nanopillars
RICCI, MARCO;BURRASCANO, Pietro;
2010
Abstract
The magnetoresistive random access memory (MRAM) combines the virtues of magnetics (e.g. infinite cyclability, non volatility, scalability) and silicon-based memories [1]. Spin-transfer-driven magnetic switching may lead to reductions of the current densities required to induce switching or to increase the switching speed. Recently, materials with perpendicular anisotropy have been proposed to be used as memory cell, since they satisfied high thermal stability at room temperature and reduced critical current. This work proposes an innovative way to excite the magnetization that is able to trigger the reversal mechanism of the magnetization. The method consists to simultaneously use a dc spin-polarized current and a very small perpendicular microwave field phase modulated by two pseudo-orthogonal Maximum Length SequencesI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
