2D numerical modeling of Si microstrip detectors under heavy radiation damage conditions

An approach to the numerical simulation of silicon microstrip detectors is discussed, with particular emphasis on the modeling of radiation damage consequences. Within the framework of a general-purpose device simulator, extension have been made aimed at describing both the transduction mechanism exploited by such devices and at providing a physically grounded account of structural modification induced by continuing exposure to radiation. In particular, influence of deep-level traps is discussed, and some limitations of simpler models are pointed out.