In this paper, a global simulation scheme is presented, which includes the self-consistent, distributed solution of Maxwell's equations and semiconductor charge transport equations over a three-dimensional domain, and is therefore capable of accurately describing the propagation of electro-magnetic field within active semiconductor devices. Strategies aimed at the reduction of computational costs are briefly illustrated as well. In order to demonstrate some of the code features, the simulation of a simple oscillator circuit (exploiting a GaAs Gunn device) is discussed, making it evident the influence of the enclosing package on the oscillator's operating mode.
Global simulation of a packaged Gunn oscillator30th European Microwave Conference, 2000
STOPPONI, Giovanni;ROSELLI, Luca;
2000
Abstract
In this paper, a global simulation scheme is presented, which includes the self-consistent, distributed solution of Maxwell's equations and semiconductor charge transport equations over a three-dimensional domain, and is therefore capable of accurately describing the propagation of electro-magnetic field within active semiconductor devices. Strategies aimed at the reduction of computational costs are briefly illustrated as well. In order to demonstrate some of the code features, the simulation of a simple oscillator circuit (exploiting a GaAs Gunn device) is discussed, making it evident the influence of the enclosing package on the oscillator's operating mode.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
