Simulation of HF circuits with FDTD technique including non-ideal lumped elementsProceedings of 1995 IEEE MTT-S International Microwave Symposium

An extension of the FDTD algorithm is devised, accounting for high-frequency models of lumped elements. Bipolar transistors, junction and Schottky diodes are considered, as well as their associated nonlinear capacitances. Several validation examples are given. In particular, a simple, yet complete, structure has been simulated, consisting of an L-band unbalanced mixer and including a microstrip stub, a microstrip to microstrip tee junction, a microstrip gap and a shielding package. Results favourably compare with alternative simulation techniques