In this paper we report: the use of GO in aqueous solution as a gate dielectric material, its application to a MOS transistor based on organic semiconductor and the use of paper as substrate material.
Flexible transistors exploiting P3HT on paper substrates and graphene oxide films as gate dielectrics: proof of concept
VALENTINI, LUCA;CARDINALI, MARTA;ALIMENTI, Federico;ROSELLI, Luca;KENNY, Jose Maria
2013
Abstract
In this paper we report: the use of GO in aqueous solution as a gate dielectric material, its application to a MOS transistor based on organic semiconductor and the use of paper as substrate material.File in questo prodotto:
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