In this paper, a simulation technique is introduced, which couples solid-state device modeling and full-wave, electromagnetic simulation of interconnections. A three-dimensional (3-D) FDTD scheme is adopted to describe the circuit passive part, whereas numerical device simulation techniques are employed for the active semiconductor devices. The resulting scheme allows for accurate mixed-mode simulation, which inherently accounts for propagation and radiative effects. An application example is discussed, consisting of the simulation of a Si-MMIC RF switch; results have been compared with predictions coming from a standard microwave circuit simulator, validating the tool, and illustrating its application range.
Mixed-mode circuit simulation with full-wave analysis of interconnections
CIAMPOLINI, Paolo;ROSELLI, Luca;STOPPONI, Giovanni
1997
Abstract
In this paper, a simulation technique is introduced, which couples solid-state device modeling and full-wave, electromagnetic simulation of interconnections. A three-dimensional (3-D) FDTD scheme is adopted to describe the circuit passive part, whereas numerical device simulation techniques are employed for the active semiconductor devices. The resulting scheme allows for accurate mixed-mode simulation, which inherently accounts for propagation and radiative effects. An application example is discussed, consisting of the simulation of a Si-MMIC RF switch; results have been compared with predictions coming from a standard microwave circuit simulator, validating the tool, and illustrating its application range.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
