This paper illustrates the activity carried out in the frame of the ESA contract nr.14628/nl/ck for the development of a miniaturized RF-MEM SPDT switch and switch matrix using micro-machining technology on silicon substrate for power applications. A manufacturing procedure, based on eight masks process has been aligned at ITC-irst laboratories. At the present a broadband singlepole-double-throw (SPDT) switch operating in the frequency range 0-30 GHz has been fabricated and measured. Isolation of about –40 dB, insertion loss better than –0.7 dB have been obtained.
RF-MEMS SPDT Switch on Silicon Substrate for Space Applications
FARINELLI, PAOLA;MEZZANOTTE, Paolo;SORRENTINO, Roberto;
2004
Abstract
This paper illustrates the activity carried out in the frame of the ESA contract nr.14628/nl/ck for the development of a miniaturized RF-MEM SPDT switch and switch matrix using micro-machining technology on silicon substrate for power applications. A manufacturing procedure, based on eight masks process has been aligned at ITC-irst laboratories. At the present a broadband singlepole-double-throw (SPDT) switch operating in the frequency range 0-30 GHz has been fabricated and measured. Isolation of about –40 dB, insertion loss better than –0.7 dB have been obtained.File in questo prodotto:
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