Preliminary Measurements of Charge Collection of p+/n Junction SiC Detectors and Simulations of Schottky Diodes

Silicon carbide is a promising wide-gap material because of its excellent electrical and physical properties, which are very relevant to technological applications. In particular, silicon carbide can represent a good alternative to Si in applications like the inner tracking detectors of particle physics experiments [1-2]. In this work p+/n SiC diodes realized on a medium doped (1×1015 cm-3), 40 um thick epitaxial layer are exploited as detectors and measurements of their charge collection properties under beta particle radiation from Sr90 source are presented. Preliminary results till 900 V reverse voltage show a good collection efficiency of 1700 e- and a collection length (ratio between collected charges and generated e-h pairs/μm) equal to the estimated width of the depleted region (Fig. 1). Preliminary simulations on Schottky diodes have been carried out using ISE-TCAD DESSIS simulation tool. Experimental results have been well reproduced.