A dual-layer 3-dB SIW power divider/combiner is designed, fabricated and tested. Very good input and output matching as well as high isolation are exhibited over a measured 50% fractional bandwidth when a 10-dB reference level is considered. A completely shielded design significantly reduces insertion losses when compared to the majority of other state-of-the-art architectures. This device can be integrated with multilayer planar circuits and it is fully compatible with standard printed circuit technology.

Hermetic Broadband 3-dB Power Divider/Combiner in Substrate-Integrated Waveguide (SIW) Technology

Gatti, Roberto Vincenti
;
ROSSI, RICCARDO
2018

Abstract

A dual-layer 3-dB SIW power divider/combiner is designed, fabricated and tested. Very good input and output matching as well as high isolation are exhibited over a measured 50% fractional bandwidth when a 10-dB reference level is considered. A completely shielded design significantly reduces insertion losses when compared to the majority of other state-of-the-art architectures. This device can be integrated with multilayer planar circuits and it is fully compatible with standard printed circuit technology.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11391/1435435
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