This letter deals with microwave noise diodes in avalanche regime. Starting from the model proposed by Hines and Gliden in 1966, the asymptotic excess noise ratio (ENR) expression is derived for ω → 0. The developed theory is then validated against ENR measurements of three noise diodes already published in the literature. The agreement between theory and measurements is good and the obtained formula also predicts the 1/I0 behavior of the ENR at low frequencies. This study is relevant because it simplifies the experimental determination of the average time between two ionizations (the Hines τx model parameter) by means of low-frequency noise measurements only.
Low-Frequency Excess Noise Ratio Approximation for Avalanche Noise Diodes
Alimenti F.
Writing – Original Draft Preparation
;Simoncini G.Membro del Collaboration Group
;
2019
Abstract
This letter deals with microwave noise diodes in avalanche regime. Starting from the model proposed by Hines and Gliden in 1966, the asymptotic excess noise ratio (ENR) expression is derived for ω → 0. The developed theory is then validated against ENR measurements of three noise diodes already published in the literature. The agreement between theory and measurements is good and the obtained formula also predicts the 1/I0 behavior of the ENR at low frequencies. This study is relevant because it simplifies the experimental determination of the average time between two ionizations (the Hines τx model parameter) by means of low-frequency noise measurements only.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
