A method is described for the preparation of device-quality, nearly flat, terraced, hydrogen-terminated, (100) silicon. The method requires heating at high temperature (say, 1100 °C) in H2, cooling to moderate temperature (670-700 °C) in the same ambient, and quenching to room temperature in N2. Evidence that the process really results in the said surface is based on atomic force microscopy, infrared absorption spectroscopy in the attenuated total reflection mode, thermal programmed desorption, reflection high energy electron diffraction, and angle-resolved X-ray photoelectron spectroscopy. © Springer-Verlag 2004.
Nearly flat, terraced, hydrogen-terminated, 1×1 (100) silicon prepared by high-temperature exposure to H2
Giorgi G.;
2005
Abstract
A method is described for the preparation of device-quality, nearly flat, terraced, hydrogen-terminated, (100) silicon. The method requires heating at high temperature (say, 1100 °C) in H2, cooling to moderate temperature (670-700 °C) in the same ambient, and quenching to room temperature in N2. Evidence that the process really results in the said surface is based on atomic force microscopy, infrared absorption spectroscopy in the attenuated total reflection mode, thermal programmed desorption, reflection high energy electron diffraction, and angle-resolved X-ray photoelectron spectroscopy. © Springer-Verlag 2004.File in questo prodotto:
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