In this work the feasibility of a low-cost microwave noise source compatible with commercial BiCMOS technologies is discussed. The proposed circuit exploits the avalanche noise generated by the base-emitter junction of a Bipolar Junction Transistor (BJT) in reverse breakdown. The collector terminal is not used and thus it is left open. The feasibility study is carried out exploiting the BFP640 device, a packaged BJT realized with a fT= 70 GHz process. A breakdown current of about 3 mA is obtained by reverse biasing the base-emitter junction at 4.5 V. In these conditions the Excess Noise Ratio (ENR) of the source is greater than 20 dB from 0.5 to 4.5 GHz.
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