In this work the feasibility of a low-cost microwave noise source compatible with commercial BiCMOS technologies is discussed. The proposed circuit exploits the avalanche noise generated by the base-emitter junction of a Bipolar Junction Transistor (BJT) in reverse breakdown. The collector terminal is not used and thus it is left open. The feasibility study is carried out exploiting the BFP640 device, a packaged BJT realized with a fT= 70 GHz process. A breakdown current of about 3 mA is obtained by reverse biasing the base-emitter junction at 4.5 V. In these conditions the Excess Noise Ratio (ENR) of the source is greater than 20 dB from 0.5 to 4.5 GHz.
Low-cost microwave noise source exploiting a BJT with junctions in avalanche regime
Simoncini G.Membro del Collaboration Group
;Alimenti F.
Membro del Collaboration Group
2019
Abstract
In this work the feasibility of a low-cost microwave noise source compatible with commercial BiCMOS technologies is discussed. The proposed circuit exploits the avalanche noise generated by the base-emitter junction of a Bipolar Junction Transistor (BJT) in reverse breakdown. The collector terminal is not used and thus it is left open. The feasibility study is carried out exploiting the BFP640 device, a packaged BJT realized with a fT= 70 GHz process. A breakdown current of about 3 mA is obtained by reverse biasing the base-emitter junction at 4.5 V. In these conditions the Excess Noise Ratio (ENR) of the source is greater than 20 dB from 0.5 to 4.5 GHz.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
