A universal simulation tool for electronic devices based on a semi-classical drift-diffusion (DD) model is presented. The core of the model is a fully-coupled system of Poisson equation for the electrostatic potential and drift-diffusion transport equations. Both charged and neutral (e.g. excitons) carriers are supported. One transport equation is associated to each carrier. The number of carriers can be set at user level. The equation system can be defined in 1, 2 and 3 dimensions, and it is solved using finite element methods (FEM). The simulator has many potential application, from simple semiconductors with electrons and holes transport, to far more complex device structures, such as the host-guest system of an OLED emitter layer including singlet and triplet excitons. The simulation of an OLED emitter layer is presented, including the thermally activated delayed fluorescence (TADF) effect.
A universal drift-diffusion simulator and its application to OLED simulations
Santoni F.;
2017
Abstract
A universal simulation tool for electronic devices based on a semi-classical drift-diffusion (DD) model is presented. The core of the model is a fully-coupled system of Poisson equation for the electrostatic potential and drift-diffusion transport equations. Both charged and neutral (e.g. excitons) carriers are supported. One transport equation is associated to each carrier. The number of carriers can be set at user level. The equation system can be defined in 1, 2 and 3 dimensions, and it is solved using finite element methods (FEM). The simulator has many potential application, from simple semiconductors with electrons and holes transport, to far more complex device structures, such as the host-guest system of an OLED emitter layer including singlet and triplet excitons. The simulation of an OLED emitter layer is presented, including the thermally activated delayed fluorescence (TADF) effect.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
