Following the experimental evidences of filament forming in organic thin film memories, we developed a semiclassical drift-diffusion model of electrical conductivity in the filament. We show that the global behavior of a memory device and the total current can be accounted for by fully-formed and well-connected filaments. We investigated and ruled out the eventual influence of coherent quantum tunneling in disconnected filaments. It is also shown how a heating model of the filament can be used to check if assumptions on the number of filaments and their radii are physically plausible.
Modeling of filamentary conduction in organic thin film memories and comparison with experimental data
Santoni F.;
2016
Abstract
Following the experimental evidences of filament forming in organic thin film memories, we developed a semiclassical drift-diffusion model of electrical conductivity in the filament. We show that the global behavior of a memory device and the total current can be accounted for by fully-formed and well-connected filaments. We investigated and ruled out the eventual influence of coherent quantum tunneling in disconnected filaments. It is also shown how a heating model of the filament can be used to check if assumptions on the number of filaments and their radii are physically plausible.File in questo prodotto:
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