Due to its excellent electrical and physical properties, silicon carbide can represent a good alternative to Si in applications like the inner tracking detectors ofparticle physics experiments (RD50, LHCC 2002–2003, 15 February 2002, CERN, Ginevra). In this work p+/n SiC diodes realised on a medium-doped (11015 cm3), 40 mm thick epitaxial layer are exploited as detectors and measurements oftheir charge collection properties under b particle radiation from a 90Sr source are presented. Preliminary results up to 900V reverse bias voltage show a good collection efficiency of 1700e and a collection length (ratio between collected charge and generated e–h pairs/mm) equal to the estimated width ofthe depleted region. Preliminary simulations on Schottky diodes have been carried out using the ISE-TCAD DESSIS simulation tool. Experimental results were reproduced well.
Measurements and Simulations of Charge Collection Efficiency of p+/n Junction SiC Detectors
SCORZONI, Andrea;
2005
Abstract
Due to its excellent electrical and physical properties, silicon carbide can represent a good alternative to Si in applications like the inner tracking detectors ofparticle physics experiments (RD50, LHCC 2002–2003, 15 February 2002, CERN, Ginevra). In this work p+/n SiC diodes realised on a medium-doped (11015 cm3), 40 mm thick epitaxial layer are exploited as detectors and measurements oftheir charge collection properties under b particle radiation from a 90Sr source are presented. Preliminary results up to 900V reverse bias voltage show a good collection efficiency of 1700e and a collection length (ratio between collected charge and generated e–h pairs/mm) equal to the estimated width ofthe depleted region. Preliminary simulations on Schottky diodes have been carried out using the ISE-TCAD DESSIS simulation tool. Experimental results were reproduced well.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
