In this work, the application of the general-purpose device simulator HFIELDS to the analysis of silicon microstrip detectors is presented. In the framework of CMS collaboration, a comprehensive device characterization has been performed by means of steady-state (DC) and small-signals (AC) numerical analyses. The study of charge collection dynamics has been carried out as well, by means of transient analysis. Simulation results exhibit a good agreement with literature data, and allow for detailed insights of device behavior. This makes it possible to investigate device-performance sensitivity to fabrication and environmental parameters and highlights potential applications of numerical analysis as a device design and optimization aid.
Numerical Simulation of Si Microstrip Detectors
PASSERI, Daniele;ROSELLI, Luca;
1997
Abstract
In this work, the application of the general-purpose device simulator HFIELDS to the analysis of silicon microstrip detectors is presented. In the framework of CMS collaboration, a comprehensive device characterization has been performed by means of steady-state (DC) and small-signals (AC) numerical analyses. The study of charge collection dynamics has been carried out as well, by means of transient analysis. Simulation results exhibit a good agreement with literature data, and allow for detailed insights of device behavior. This makes it possible to investigate device-performance sensitivity to fabrication and environmental parameters and highlights potential applications of numerical analysis as a device design and optimization aid.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
