An active pixel sensor has been developed using standard CMOS technology, UMC 0:18 mm with no epitaxial layer, with pixel size 4:4 4:4 mm, in the framework of the INFN RAPS project. In this work we will report on the results obtained using several types of ionizing radiation sources (laser, X-ray tubes, b and g) to test extensively the device. Some of the main results obtained are: a signal/noise value for minimum ionizing particles of about 20, a very good linearity of the response, a good spatial confinement of the signal (cluster size of the order of few pixels).
Test of a MAPS realized in standard non-epitaxial CMOS 0.18um technology
PASSERI, Daniele;PLACIDI, Pisana;
2007
Abstract
An active pixel sensor has been developed using standard CMOS technology, UMC 0:18 mm with no epitaxial layer, with pixel size 4:4 4:4 mm, in the framework of the INFN RAPS project. In this work we will report on the results obtained using several types of ionizing radiation sources (laser, X-ray tubes, b and g) to test extensively the device. Some of the main results obtained are: a signal/noise value for minimum ionizing particles of about 20, a very good linearity of the response, a good spatial confinement of the signal (cluster size of the order of few pixels).File in questo prodotto:
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