Characterization of CMOS Spiral Inductors

In this work "full-wave" simulations of integrated inductors are presented and compared with measurements of fabricated CMOS chips. The good agreement between measurements and simulations demonstrates the accuracy of the tool, which is, hence, a cheaper alternative to experimental characterization. Furthermore, the proposed approach may give precious hints for performance improvements, by making internal device fields and currents available for the VLSI designer and providing compact, most effective, equivalent models.