This paper proposes a design approach applicable to class-A amplifiers in Silicon-Germanium (SiGe) BiCMOS technology. Such an approach is based on the combination of Cripps’ method with simple device-scaling rules. A fully-integrated differential-cascode amplifier for the 5GHz frequency band is presented as a case-of-study. The amplifier has been implemented in a commercial 0.35um technology and operates with a low 3V supply. Preliminary measurements of the realized prototype confirm the validity of the proposed approach.
Design of Driver Amplifiers in SiGe Technology for 5 GHz WLAN Applications
ALIMENTI, Federico;PALAZZARI, VALERIA;ROSELLI, Luca;SCORZONI, Andrea
2004
Abstract
This paper proposes a design approach applicable to class-A amplifiers in Silicon-Germanium (SiGe) BiCMOS technology. Such an approach is based on the combination of Cripps’ method with simple device-scaling rules. A fully-integrated differential-cascode amplifier for the 5GHz frequency band is presented as a case-of-study. The amplifier has been implemented in a commercial 0.35um technology and operates with a low 3V supply. Preliminary measurements of the realized prototype confirm the validity of the proposed approach.File in questo prodotto:
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