A variable-gain class-A amplifier for 5-GHz wireless local area networks (WLAN) applications is developed using commercial 0.35-μm Si/SiGe BiCMOS technology. The amplifier is based on a cascode differential pair and is fully integrated with input and output matching networks. The design starts with application of the Cripps' method and it is further refined by non-linear harmonic-balance simulations. These simulations are in good agreement with the measurements carried out at wafer level on a realized prototype.

A 3V Variable Gain Amplifier in Si/SiGe BiCMOS Technology for 5 GHz WLAN Applications

ALIMENTI, Federico;PALAZZARI, VALERIA;ROSELLI, Luca;SCORZONI, Andrea
2005

Abstract

A variable-gain class-A amplifier for 5-GHz wireless local area networks (WLAN) applications is developed using commercial 0.35-μm Si/SiGe BiCMOS technology. The amplifier is based on a cascode differential pair and is fully integrated with input and output matching networks. The design starts with application of the Cripps' method and it is further refined by non-linear harmonic-balance simulations. These simulations are in good agreement with the measurements carried out at wafer level on a realized prototype.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11391/157937
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