Characterization of HBT-based Avalanche Noise Sources Using Standard Test Structures for Measurement of Transistor Scattering Parameters

This paper presents the methodology for the equivalent model extrapolation of a noise source, when standard test structures for measuring the transistor scattering parameters are adopted. After a comprehensive background explanation, a detailed description of the used test structures and setup is provided. With respect to the conventional noise source model, some adjustments were made to further adapt to real device behavior. Afterwards, the methodology is rigorously validated by applying the adopted approach to perform model extrapolation of a noise source based on a 130-nm SiGe technology npn transistor base-collector junction. In this way, a significant improvement in model accuracy and prediction capability can be demonstrated.