TCAD Simulations and Measurements of a-Si:H devices for particle detection

In this work, we presented the development of a simulation methodology for a-Si:H devices in a commercial state-of-The-Art simulation environment. Hydrogenated amorphous silicon (a-Si:H) has emerged as an attractive material for particle detectors, driven by its high bandgap, which translates to minimal leakage current, and the potential for cost-effective large-Area deposition on diverse substrates. The adoption of Technology Computer Aided Design (TCAD) simulation represents a powerful mean for the design and optimization of particle detectors, fostering the evaluation of the electrical properties of the material and the interaction with a particle at device level. We included within the Synopsys Sentaurus TCAD a new material featuring the main parameters of a-Si:H (e.g. band-gap, density of states, e/h creation energy) and an articulated picture of energy of states of defects. Moreover, a brand-new mobility model, derived from the Pool-Frenkel one, has been developed and included as external add-on, accounting for the influence on the mobility of the potential/electric field distribution inside the device and of the temperature. Simulation findings have been compared with measurements carried out on different p-i-n samples for model validation purposes.