Overview of the electrical characterization of silicon micro-strip sensors

This paper presents an overview of the electrical parameters commonly measured for the electrical certification of silicon micro-strip sensors. Mainly, parameters which contribute to the noise at the input of the read-out electronics will be described: the single-strip leakage current, the biasing resistance (the poly-silicon resistance for poly-silicon biasing and the bias-ring to strip resistance for punch-through biasing), the dielectric current and the coupling capacitance (for AC-coupling). Global parameters like total capacitance and total leakage current will be also presented. The general characteristics of the hardware system and a description of the electrical set-up configurations recommended for an accurate measurement of the electrical parameters will be also illustrated.