To obtain full advantage from RF- MEMS integration with GaN-HEMT MMIC’s high performance, MEMS are requested. Therefore in this work we have simulated and fabricated different MEMS topologies on GaN/Si substrates to optimize RF- MEMS performances in the frequency range 1-30 GHz
Integrated RF-MEMS for GaN-based MMICs
FARINELLI, PAOLA;
2010
Abstract
To obtain full advantage from RF- MEMS integration with GaN-HEMT MMIC’s high performance, MEMS are requested. Therefore in this work we have simulated and fabricated different MEMS topologies on GaN/Si substrates to optimize RF- MEMS performances in the frequency range 1-30 GHzFile in questo prodotto:
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