This paper illustrates the activity carried out in the frame of the ESA contract NR.14628/NL/CK for the development of a miniaturized RF-MEM SPDT switch and switch matrix using micro-machining technology on Silicon substrate for power applications. A manufacturing procedure, based on eight masks process has been aligned at ITC-irst laboratories. At the present a broadband Single-Pole-Double-Throw (SPDT) switch operating in the frequency range 0-30 GHz has been fabricated and measured. Isolation of about -40 dB, insertion loss better than -0.7 dB have been obtained

Innovativo SPDT Rf-MEMS Switch Su Silicio Per Applicazioni Spaziali

FARINELLI, PAOLA;MEZZANOTTE, Paolo;SORRENTINO, Roberto;
2004

Abstract

This paper illustrates the activity carried out in the frame of the ESA contract NR.14628/NL/CK for the development of a miniaturized RF-MEM SPDT switch and switch matrix using micro-machining technology on Silicon substrate for power applications. A manufacturing procedure, based on eight masks process has been aligned at ITC-irst laboratories. At the present a broadband Single-Pole-Double-Throw (SPDT) switch operating in the frequency range 0-30 GHz has been fabricated and measured. Isolation of about -40 dB, insertion loss better than -0.7 dB have been obtained
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11391/23762
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