The energy loss distribution f (D) of highly relativistic charged particles has been measured for thin silicon layers with thickness ranging from 5.6 to 120 mm. In this work, using an innovative method, the dependence of the energy loss distribution from the thickness of the silicon absorber has been investigated in great detail with reference to CMOS Active Pixel Sensors. The measured energy loss distributions are well-reproduced by calculations also when the target electrons binding energy is taken into account. Finally the results obtained with this method are compared with existing experimental results and theoretical data.
Energy loss measurement for charged particles in very thin silicon layers
MEROLI, STEFANO;PASSERI, Daniele;
2011
Abstract
The energy loss distribution f (D) of highly relativistic charged particles has been measured for thin silicon layers with thickness ranging from 5.6 to 120 mm. In this work, using an innovative method, the dependence of the energy loss distribution from the thickness of the silicon absorber has been investigated in great detail with reference to CMOS Active Pixel Sensors. The measured energy loss distributions are well-reproduced by calculations also when the target electrons binding energy is taken into account. Finally the results obtained with this method are compared with existing experimental results and theoretical data.File in questo prodotto:
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