The energy loss distribution f (D) of highly relativistic charged particles has been measured for thin silicon layers with thickness ranging from 5.6 to 120 mm. In this work, using an innovative method, the dependence of the energy loss distribution from the thickness of the silicon absorber has been investigated in great detail with reference to CMOS Active Pixel Sensors. The measured energy loss distributions are well-reproduced by calculations also when the target electrons binding energy is taken into account. Finally the results obtained with this method are compared with existing experimental results and theoretical data.

Energy loss measurement for charged particles in very thin silicon layers

MEROLI, STEFANO;PASSERI, Daniele;
2011

Abstract

The energy loss distribution f (D) of highly relativistic charged particles has been measured for thin silicon layers with thickness ranging from 5.6 to 120 mm. In this work, using an innovative method, the dependence of the energy loss distribution from the thickness of the silicon absorber has been investigated in great detail with reference to CMOS Active Pixel Sensors. The measured energy loss distributions are well-reproduced by calculations also when the target electrons binding energy is taken into account. Finally the results obtained with this method are compared with existing experimental results and theoretical data.
2011
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11391/367495
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 62
  • ???jsp.display-item.citation.isi??? 57
social impact