The activation energy of electromigration in 'bamboo'-type, passivated Al-I%SMNfri lines was determined by means of high resolution resistance measurements at wafer level. Both the veiy early stages, with a nonlinear behaviour of the resistance, and the subsequent stages, characterized by an approximate!y constant rate of resistance change, were analysed with an existing model that correlates electromigration and mechanical stress evolution. An activation energy could be extracted only in the phase of linear resistance increase, where a value of 0.95 eV was found. Diffusion at the interface between AlSi and the barrier metal or the passivation could be responsible for this value of the activation energy.
Activation energy in the early stage of electromigration in Al-1% Si/TiN/Ti bamboo lines
SCORZONI, Andrea;
1995
Abstract
The activation energy of electromigration in 'bamboo'-type, passivated Al-I%SMNfri lines was determined by means of high resolution resistance measurements at wafer level. Both the veiy early stages, with a nonlinear behaviour of the resistance, and the subsequent stages, characterized by an approximate!y constant rate of resistance change, were analysed with an existing model that correlates electromigration and mechanical stress evolution. An activation energy could be extracted only in the phase of linear resistance increase, where a value of 0.95 eV was found. Diffusion at the interface between AlSi and the barrier metal or the passivation could be responsible for this value of the activation energy.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
