Thermal characterization of Al-1%Si thin films was performed before and after electromigration life tests. The additional resistance, due to the electromigration damage, was found to be dependent on temperature. Furthermore, the conservation of the thermal coefficient of resistivity was ascertained. Such a behaviour does not conform to Matthiessen's rule, which is obeyed when changes in resistivity can be ascribed to an increase in defect concentration. It is suggested that the electromigration damage should not be interpreted as a dilute solid solution of defects in the aluminium lattice but as a geometrical change, even in the first stages of the phenomenon.
Electromigration and Matthiessen's rule: Experiments on non-passivated Al-1%Si films
SCORZONI, Andrea
1990
Abstract
Thermal characterization of Al-1%Si thin films was performed before and after electromigration life tests. The additional resistance, due to the electromigration damage, was found to be dependent on temperature. Furthermore, the conservation of the thermal coefficient of resistivity was ascertained. Such a behaviour does not conform to Matthiessen's rule, which is obeyed when changes in resistivity can be ascribed to an increase in defect concentration. It is suggested that the electromigration damage should not be interpreted as a dilute solid solution of defects in the aluminium lattice but as a geometrical change, even in the first stages of the phenomenon.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
