Titanium nitride films were prepared by implanting 40keV N2+ ions into Si〈100〉n+/p shallow junctions coated with titanium layers of different thicknesses (from 80 up to 100nm). Using a suitable thermal annealing a film of TiSi2 is formed at the TiN-Si interface, as demonstrated by transmission electron microscopy (TEM) observations on planar and cross-sectioned specimens, as well as by Rutherford backscattering spectrometry experiments. The effectiveness of these TiN films as diffusion barriers when placed in contact with a thick aluminium overlayer is evaluated, and their electrical performances are tested on suitable test patterns after thermal treatments up to 600°C. The variation in the structure of the interfaces in the TiSi2/TiN/Al contacts is followed as a function of the heat treatment by cross-sectional TEM investigations and the results are presented.
Electron microscopy observations of N2+ -implanted TiN films as diffusion barriers for very-large-scale integration applications
SCORZONI, Andrea;
1986
Abstract
Titanium nitride films were prepared by implanting 40keV N2+ ions into Si〈100〉n+/p shallow junctions coated with titanium layers of different thicknesses (from 80 up to 100nm). Using a suitable thermal annealing a film of TiSi2 is formed at the TiN-Si interface, as demonstrated by transmission electron microscopy (TEM) observations on planar and cross-sectioned specimens, as well as by Rutherford backscattering spectrometry experiments. The effectiveness of these TiN films as diffusion barriers when placed in contact with a thick aluminium overlayer is evaluated, and their electrical performances are tested on suitable test patterns after thermal treatments up to 600°C. The variation in the structure of the interfaces in the TiSi2/TiN/Al contacts is followed as a function of the heat treatment by cross-sectional TEM investigations and the results are presented.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
