Several procedures for contact resistance measurements have been proposed in the past. In this paper the two most relevant methods for measurements on planar VLSI ohmic contacts are discussed and applied to the study of n+ (and p+)Si/Al-1%Si ohmic contacts.
Methods for Contact Resistance Measurements: Applications to (n+, p+)Si/Al-1%Si Ohmic Contacts
SCORZONI, Andrea;
1984
Abstract
Several procedures for contact resistance measurements have been proposed in the past. In this paper the two most relevant methods for measurements on planar VLSI ohmic contacts are discussed and applied to the study of n+ (and p+)Si/Al-1%Si ohmic contacts.File in questo prodotto:
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