A new SEM technique has been developed for the study of the local sensitivity to latch-up of CMOS integrated circuits. The technique is independent of a particuar electric firing mechanism of latch-up and does not require in-depth eIectrical characterization of the IC before the analysis. The electron beam in the SEM is adopted as a locaized current injector, and the injected carriers are used to induce the latch-up state rather than to visualize its paths. A minicomputer-based system drives the beam position and automatically blanks the beam if the scan path has to cross areas which should be protected from charge injection. An example of application is described.

Measurement of the local latch-up sensitivity by means of computer-controlled scanning electron microscopy

SCORZONI, Andrea;
1988

Abstract

A new SEM technique has been developed for the study of the local sensitivity to latch-up of CMOS integrated circuits. The technique is independent of a particuar electric firing mechanism of latch-up and does not require in-depth eIectrical characterization of the IC before the analysis. The electron beam in the SEM is adopted as a locaized current injector, and the injected carriers are used to induce the latch-up state rather than to visualize its paths. A minicomputer-based system drives the beam position and automatically blanks the beam if the scan path has to cross areas which should be protected from charge injection. An example of application is described.
1988
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11391/916211
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