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EnglishA structure, named the circular resistor (CR), is proposed for extracting metal-semiconductor contact resistivity. Its particular geometry allows it to fit the actual geometry of VLSI contacts. An analytical form for the contact resistance is shown as a function of the contact parameters. The Pd/sub 2/Si/n/sup +/Si, TiN/Ti/n/sup +/Si, and TiN/Ti/p/sup +/Si interfaces are investigated by means of CRs of various dimensions, and a single value of contact resistivity is extracted for each interface.
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| Titolo: | A novel circular structure for the extraction of the contact resistivity-application to the Pd2/Si/n+/Si, TiN/Ti/n+/Si and TiN/Ti/p+/Si interfaces |
| Autori: | |
| Data di pubblicazione: | 1990 |
| Abstract: | A structure, named the circular resistor (CR), is proposed for extracting metal-semiconductor contact resistivity. Its particular geometry allows it to fit the actual geometry of VLSI contacts. An analytical form for the contact resistance is shown as a function of the contact parameters. The Pd/sub 2/Si/n/sup +/Si, TiN/Ti/n/sup +/Si, and TiN/Ti/p/sup +/Si interfaces are investigated by means of CRs of various dimensions, and a single value of contact resistivity is extracted for each interface. |
| Handle: | http://hdl.handle.net/11391/916304 |
| ISBN: | 9992886870 |
| Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
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http://hdl.handle.net/11391/916304
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