A comparison between interfacial contact resistance (Ri) and End Resistance (Re) on n+ nested and self-aligned contacts metallized with two different schemes: Al-1% Si and Ti/TiN/Al-Si is presented. The quite different values of Ri and Re on the contacts with Ti TiN/Al-Si have been explained according to the considerable current crowding phenomenon which occurs when the tranfer length ''lt'' of the contact (defined by the transmission line model) is much shorter than the contact linear dimension.

Current Crowding in Nested and Self-Aligned Micrometric Contacts

SCORZONI, Andrea
1989

Abstract

A comparison between interfacial contact resistance (Ri) and End Resistance (Re) on n+ nested and self-aligned contacts metallized with two different schemes: Al-1% Si and Ti/TiN/Al-Si is presented. The quite different values of Ri and Re on the contacts with Ti TiN/Al-Si have been explained according to the considerable current crowding phenomenon which occurs when the tranfer length ''lt'' of the contact (defined by the transmission line model) is much shorter than the contact linear dimension.
1989
0387510001
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11391/922254
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