A comparison between interfacial contact resistance (Ri) and End Resistance (Re) on n+ nested and self-aligned contacts metallized with two different schemes: Al-1% Si and Ti/TiN/Al-Si is presented. The quite different values of Ri and Re on the contacts with Ti TiN/Al-Si have been explained according to the considerable current crowding phenomenon which occurs when the tranfer length ''lt'' of the contact (defined by the transmission line model) is much shorter than the contact linear dimension.
Current Crowding in Nested and Self-Aligned Micrometric Contacts
SCORZONI, Andrea
1989
Abstract
A comparison between interfacial contact resistance (Ri) and End Resistance (Re) on n+ nested and self-aligned contacts metallized with two different schemes: Al-1% Si and Ti/TiN/Al-Si is presented. The quite different values of Ri and Re on the contacts with Ti TiN/Al-Si have been explained according to the considerable current crowding phenomenon which occurs when the tranfer length ''lt'' of the contact (defined by the transmission line model) is much shorter than the contact linear dimension.File in questo prodotto:
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