Modeling of critical electric field within irradiated Si-microstrip detectors

Passeri, Daniele; Ciampolini, P.; Scorzoni, Andrea; Moscatelli, F.; Bilei, G. M.

doi:10.1109/NSSMIC.1999.842444

In this summary, a computer-based analysis of AC-coupled silicon microstrip detectors is presented. The study aims at investigating the main geometrical parameters responsible of the micro-discharges which occur at strip edges with increasing bias voltage. The adoption of CAD tools allows for evaluating the actual field distribution within the device, and make it possible to identify critical regions. The adoption of overhanging metal strips is shown to have a positive impact on the electric field distribution, reducing corner effects. A beneficial impact of such an overhang on the interstrip capacitance is foreseen as well

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Titolo:	Modeling of critical electric field within irradiated Si-microstrip detectors
Autori:	PASSERI, Daniele Ciampolini P. SCORZONI, Andrea Moscatelli F. Bilei G. M. mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	1999
Rivista:	IEEE CONFERENCE RECORD - NUCLEAR SCIENCE SYMPOSIUM & MEDICAL IMAGING CONFERENCE
Abstract:	In this summary, a computer-based analysis of AC-coupled silicon microstrip detectors is presente...d. The study aims at investigating the main geometrical parameters responsible of the micro-discharges which occur at strip edges with increasing bias voltage. The adoption of CAD tools allows for evaluating the actual field distribution within the device, and make it possible to identify critical regions. The adoption of overhanging metal strips is shown to have a positive impact on the electric field distribution, reducing corner effects. A beneficial impact of such an overhang on the interstrip capacitance is foreseen as well
Handle:	http://hdl.handle.net/11391/922312
ISBN:	0780356969
Appare nelle tipologie:	4.1 Contributo in Atti di convegno

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