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EnglishIn this summary, a computer-based analysis of AC-coupled silicon microstrip detectors is presented. The study aims at investigating the main geometrical parameters responsible of the micro-discharges which occur at strip edges with increasing bias voltage. The adoption of CAD tools allows for evaluating the actual field distribution within the device, and make it possible to identify critical regions. The adoption of overhanging metal strips is shown to have a positive impact on the electric field distribution, reducing corner effects. A beneficial impact of such an overhang on the interstrip capacitance is foreseen as well
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| Titolo: | Modeling of critical electric field within irradiated Si-microstrip detectors |
| Autori: | |
| Data di pubblicazione: | 1999 |
| Rivista: | |
| Abstract: | In this summary, a computer-based analysis of AC-coupled silicon microstrip detectors is presented. The study aims at investigating the main geometrical parameters responsible of the micro-discharges which occur at strip edges with increasing bias voltage. The adoption of CAD tools allows for evaluating the actual field distribution within the device, and make it possible to identify critical regions. The adoption of overhanging metal strips is shown to have a positive impact on the electric field distribution, reducing corner effects. A beneficial impact of such an overhang on the interstrip capacitance is foreseen as well |
| Handle: | http://hdl.handle.net/11391/922312 |
| ISBN: | 0780356969 |
| Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
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